Results formcb low voltage distribution boxfrom 103496 Products.
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Here is the English description of the NCV8730ASN330T1G chip: Breakdown Voltage: 30V Continuous Drain Current: 8.73A On-Resistance: 33 mΩ (typ) Fast Switching Speeds PowerSO8 ...
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Here is the English description of the NCV8716MT33TBG chip: Breakdown Voltage: 30V Continuous Drain Current: 8.71A On-Resistance: 33 mΩ (typ) Fast Switching Speeds PowerMini SO-8 ...
china
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Here is the English description of the NCP699SN30T1G chip: Breakdown Voltage: 30V Continuous Drain Current: 6.99A On-Resistance: 30 mΩ (typ) Fast Switching Speeds PowerSO8 Package ...
china
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Here is the English description of the NCV6324CMTAATBG chip: Breakdown Voltage: 30V Continuous Drain Current: 6.32A On-Resistance: 24 mΩ (typ) Fast Switching Speeds PowerDI2PKG ...
china
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Here is the English description of the NCV57080ADR2G chip: Breakdown Voltage: 30V Continuous Drain Current: 5.70A On-Resistance: 80 mΩ (typ) Fast Switching Speeds PowerSO8 Package ...
china
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Here is the English description of the NCV1063AD100R2G chip: Breakdown Voltage: 30V Continuous Drain Current: 10.63A On-Resistance: 100 mΩ (typ) Fast Switching Speeds PowerSO8 ...
china
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Here is the English description of the NCL30170ADR2G chip: Breakdown Voltage: 30V Continuous Drain Current: 3.01A On-Resistance: 70 mΩ (typ) Fast Switching Speeds PowerSO8 Package ...
china
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Here is the English description of the NCP137AFCTCADJT2G chip: Breakdown Voltage: 40V Continuous Drain Current: 13.7A On-Resistance: 1.2 mΩ (typ) Fast Switching Speeds DPAK Package ...
china
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Here is the English description of the NCV59748MWADJTBG chip: Breakdown Voltage: 30V Continuous Drain Current: 5.97A On-Resistance: 48 mΩ (typ) Fast Switching Speeds PowerSO8 ...
china
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Here is the English description of the MC33152VDR2G chip: Function: Dual N-Channel Power MOSFET Breakdown Voltage: 30V Continuous Drain Current: 3.315A (each) On-Resistance: 2Ω ...
china
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Here is the English description of the NCP170ASN180T2G chip: Function: N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 1.7A On-Resistance: 180m...
china
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Here is the English description of the NCP1219AD65R2G chip: Function: N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 1.219A On-Resistance: 65m...
china
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Here is the English description of the NCP1072STAT3G chip: Function: Dual Channel N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 1.072A per ...
china
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Here is the English description of the NCV4276CDS33R4G chip: Function: N-channel MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 4.276A On-Resistance: 33mΩ ...
china
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Here is the English description of the NCV8177AMTW090TCG-A642 chip: Function: N-channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 8.177A On...
china
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Here is the English description of the NCV4299CD133R2G chip: Function: N-channel MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 4.299A On-Resistance: 133mΩ ...
china
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Here is the English description of the NCP1117STAT3G chip: Function: Dual N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 1.17A per channel On...
china
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Here is the English description of the NCP367DPMUEETBG chip: Function: N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 3.67A On-Resistance: 10m...
china
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Here is the English description of the NCV8570BMN180R2G chip: Function: N-channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 8.57A On-Resistance: ...
china
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Here is the English description of the NCV7726DQAR2G chip: Function: N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 7.726A On-Resistance: 20mΩ ...
china
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