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NCP1117STAT3G onsemi

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NCP1117STAT3G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Ceramics
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Product Details

Here is the English description of the NCP1117STAT3G chip:

  • Function: Dual N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.17A per channel
  • On-Resistance: 3mΩ max per channel
  • Fast Switching Speed
  • PowerSO-8 Package

The NCP1117STAT3G is a dual N-channel MOSFET power switch from ON Semiconductor.

Key Features:

  • Integrates two independent 1.17A N-Channel MOSFETs
  • Ultra-low RDS(on) of 3mΩ per channel
  • PowerSO-8 package saves PCB space
  • Optimized for high precision switching applications

Common Applications:

  • Synchronous buck regulators and converters
  • Dual channel motor drivers up to 1.17A each
  • Applications where dual package reduces components

Benefits include a compact dual switch solution to precisely control up to 1.17A per channel with minimal resistance losses.

Well-suited for applications requiring switching of 1.17A across two independent channels in a small footprint.

In summary, the NCP1117STAT3G integrates a dual 1.17A/channel switch with industry-leading low RDS(on) in a space-saving package.

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