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NCV4276CDS33R4G onsemi

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NCV4276CDS33R4G onsemi

Country/Region china
City & Province shenzhen
Categories Power Distribution Equipment
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Product Details

Here is the English description of the NCV4276CDS33R4G chip:

  • Function: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.276A
  • On-Resistance: 33mΩ (typ)
  • Fast switching speed
  • D2PAK Surface Mount Package

The NCV4276CDS33R4G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching up to 4.276A
  • Ultra-low RDS(on) of 33mΩ minimizes conduction losses
  • Fast switching enables high efficiency operation
  • Standard D2PAK package provides ruggedness

Common Applications:

  • Point-of-load DC/DC converters under 4.276A loads
  • Motor driver and controller circuits up to 4.276A
  • Compatible replacement for through-hole DPAK designs

Benefits include reliable 4.276A switching capability with industry-leading low resistance. Compatible D2PAK package simplifies surface mount designs.

Well suited for applications requiring precise control of currents up to 4.276A where conduction losses must be minimized.

In summary, the NCV4276CDS33R4G delivers 4.276A switching with ultra-low losses and proven package compatibility.

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