Results forjoptec ggg wafers and substratesfrom 926 Products.
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
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diameter 300mm sapphire glass lens; ultrathin sapphire glass wafer ,4inch 0.5mm C-axis sapphire wafer for epi-ready,sapphire thick glass lens for covering,sapphire optical windows...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi...
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P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and ...
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
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2inch GaAs (111) Si-doped substrates Overview Gallium in a GaAs Wafer is in general used in the production of semiconductors, barometers, light emitting diodes, thermometers and ...
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide is used in the manufacture of light-emitting diode s (LEDs), which are found in optical communications and control ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing ...
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JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal ...
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10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectr...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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GaAs-Si Wafer 2inch GaAs (100) Undoped Substrates (100)15°±0.5° Off Toward<111>A Overview Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some diode s, ...
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2-Inch Silicon Wafer Thickness Tolerance Standard ± 25μm,Maximum Capabilities ± 5μm 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices ...
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Discrete Devices 2-Inch Silicon Wafer Thickness(μm) 279/380/525/625/675/725/775 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices ...
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2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview In daily life we hardly ever see a silicon wafer, but they are used in ...
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Silicon Wafer Type/Dopant P Type/Boron,N Type/Phos,N Type/As, N Type/Sb 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview ...
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Thickness(μm) 279 2-Inch Silicon Wafer Orientation <1-0-0>,<1-1-1>,<1-1-0> 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview ...
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