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joptec ggg wafers and substrates

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High Lattice Constant 12.497A Substituted GGG Wafer Substituted Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) single crystal subatrates has higer lattice constant comparing with GGG ...
china
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12inch dia300mm 0.7mm thickness Borosilicate33 substrate glass wafers BF33 Wafers Feature Borosilicate glass is desirable due to its low Co-efficient of Thermal Expansion (CTE) ...
Shanghai, china
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2inch GaAs(100) Zn-doped substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
Shanghai, china
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4 Inch SSP/DSP Dia100mm A-Plane Axis-C Sapphire Wafer Substrates Carrier Single Crystal Product Description: Sapphire is a material of a unique combination of physical, chemical ...
Shanghai, china
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
Shanghai, china
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8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
Shanghai, china
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2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview A silicon wafer is a material essential for manufacturing semiconductors, ...
Shanghai, china
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8inch c-plane sapphire wafer,dia200mm sapphire substrates ,2-6inch C-axis double side polished sapphire wafer for led epi-ready,sapphire substrates, Al2O3 crystal optical lens ...
Shanghai, china
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JDCD08-001-005 4inch R-Plane Sapphire Substrate Wafer Sapphire's high purity and strength is an excellent and industry-accepted material for Semiconductor manufacturing. Its ...
Shanghai, china
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
Shanghai, china
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
Shanghai, china
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5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
Shanghai, china
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...
Shanghai, china
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JDCD08-001-004 2inch R-Plane Sapphire Substrate Wafer Sapphire is one of the toughest minerals on Earth–harder than steel, though more fragile than diamond. The two rarest sapphire ...
Shanghai, china
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FWHM

Apr,26,2024
FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness ...
Shanghai, china
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Applications Laser diodes: violet LD, blue LD, and green LD ...
Shanghai, china
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview GaN Substrates GaN (gallium nitride) substrates and ...
Shanghai, china
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) ...
Shanghai, china
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JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength ...
Shanghai, china
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JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength ...
Shanghai, china
Verified
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