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NCP612SQ18T2G onsemi

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NCP612SQ18T2G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Plugs & Sockets
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Product Details

Here is the English description of the NCP612SQ18T2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 6.12A
  • On-Resistance: 18 mΩ (typ)
  • Fast Switching Speeds
  • SOT-323 Package

The NCP612SQ18T2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 6.12A
  • Low RDS(on) of 18 mΩ minimizes conduction losses
  • Fast switching speeds for high efficiency
  • SOT-323 small package size

Common Applications:

  • Point-of-load DC/DC converters below 6.12A loads
  • Motor driver and control circuits under 6.12A current
  • Applications where small package size is required

Benefits include reliable 6.12A switching performance with low on-resistance in a compact SOT-323 package.

Well-suited for applications needing to switch up to 6.12A where board space is limited.

In summary, the NCP612SQ18T2G delivers 6.12A capability with low resistance in a space-saving SOT-323 package.

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