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NCV7450DB0R2G onsemi

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NCV7450DB0R2G onsemi

Country/Region china
City & Province shenzhen
Categories Batteries
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Product Details

Here is the English description of the NCV7450DB0R2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 7.45A
  • On-Resistance: 20 mΩ (typ)
  • Fast Switching Speeds
  • Dual PowerBar SOIC-8 Package

The NCV7450DB0R2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 7.45A
  • Low RDS(on) of 20 mΩ minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • Dual PowerBar SOIC-8 package enhances thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 7.45A loads
  • Motor drivers requiring compact design with cooling
  • Applications where dual device configuration is needed

Benefits include reliable 7.45A switching performance with industry-leading low resistance. The innovative dual PowerBar package maximizes heat transfer.

Well-suited for applications requiring switching currents up to 7.45A where strong thermal management is important.

In summary, the NCV7450DB0R2G delivers 7.45A capability with ultra-low losses and optimized thermal dissipation in a dual PowerBar package.

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