Results forh30r1602 n mosfet transistorfrom 9475 Products.
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BF422 NPN SILICON PLANAR EPITAXIAL TRANSISTOR low power mosfet N Channel MOS FET ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C ) DESCRIPTION SYMBOL VALUE UNITS Collector -Base Voltage VCBO ...
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. ...
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100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique ...
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SI4435DY 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been ...
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IRLML6401PBF HEXFET® Power MOSFET • Ultra Low On-Resistance • P-Channel MOSFET • SOT-23 Footprint • Low Profile (<1.1mm) • Available in Tape and Reel • Fast Switching • 1.8V Gate ...
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IRFP9240, SiHFP9240 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • ...
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IRF640NPbF IRF640NSPbF IRF640NLPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of ...
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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA ...
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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Application...
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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small ...
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NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and ...
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BFQ67 / BFQ67R / BFQ67W Silicon NPN Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component ...
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Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior ...
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TIP3055 Silicon NPN Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General ...
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FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power ...
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2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 @ 10 V, 500 mA 115 mA MAXIMUM RATINGS ...
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2SK3581-01S N-CHANNEL SILICON POWER MOSFET high voltage power mosfet Features ►High speed switching ►Low on-resistance ►No secondary breadown ►Low driving power Avalanche-proof ...
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IRL3713PbF IRL3713SPbF IRL3713LPbF HEXFET Power MOSFET SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial ...
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SUD25N06-45L N-Channel 60-V (D-S), 175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage ...
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Si2323CDS P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc...
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