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20V Power Mosfet Transistor N-Channel PowerTrench MOSFET FDV305N

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

FDV305N 20V N-Channel PowerTrench MOSFET

General Description

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Applications

• Load switch

• Battery protection

• Power management

Features

• 0.9 A, 20 V

RDS(ON) = 220 mΩ @ VGS = 4.5 V

RDS(ON) = 300 mΩ @ VGS = 2.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

Absolute Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	± 12	V
I_D	Drain Current – Continuous – Pulsed	0.9 2	A
P_D	Maximum Power Dissipation	0.35	W
T_J, T_STG	Operating and Storage Junction Temperature Range	–55 to +150	°C

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