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BC847C general purpose npn transistor Power Mosfet Transistor SOT-23 BIPOLAR TRANSISTORS TRANSISTOR

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[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

NPN general purpose Transistor BC847AT/BT/CT

FEATURES

APPLICATIONS

ORDERING INFORMATION

Type No. Marking Package Code

BC846AT/BT/CT 1E/1F/1G SOT-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol	Parameter	Value	Units
V_CBO	Collector-Base Voltage	50	V
V_CEO	Collector-Emitter Voltage	45	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	0.1	A
P_C	Collector Dissipation	150	mW
T_j,T_stg	Junction and Storage Temperature	-55~150	℃

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

PACKAGE OUTLINE

Plastic surface mounted package SOT-523

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