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QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM

HongKong Wei Ya Hua Electronic Technology Co.,Limited

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QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM

Country/Region china
City & Province shenzhen
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Product Details

QPA2933 RF Amplifier 2.9-3.3GHz 60W GaN PA OVM

Qorvo QPA2933 S-Band 60W GaN Power Amplifier

Qorvo QPA2933 S-Band 60W GaN Power Amplifier is optimized for 2.9GHz to 3.3GHz, delivering 48.8dBm of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to support system requirements. With excellent thermal properties, this device can support a range of bias voltages.

The Qorvo QPA2933 S-Band Power Amplifier is packaged in a 7mm x 7mm 48-pin plastic overmolded package and has DC blocking capacitors on both RF ports, which are matched to 50Ω, and the input port is shorted to ground. This device is ideal for use in both commercial and military radar systems.

FEATURES

  • 2.9GHz to 3.3GHz frequency range
  • 48.8dBm saturated output power (PSAT)
  • 62% power added efficiency (PAE)
  • 28dB large signal gain
  • Bias: VDS=+28V, IDQ=680mA
  • -40°C to +85°C operating temperature range
  • 7.0mm x 7.0mm x 0.85mm 48-pin plastic overmolded package
  • Halogen-free, lead-free, and RoHS compliant

APPLICATIONS

  • Commercial and military communications
  • Commercial and military radar

BLOCK DIAGRAM

Block Diagram - Qorvo QPA2933 S-Band 60W GaN Power Amplifier

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