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IRF1010N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description ...
Guangdong, china
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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 Plastic Darlington complementary silicon power transistors are designed for general purpose ...
Guangdong, china
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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell Darlington 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) PINNING PIN DESCRIPTION ...
Guangdong, china
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2SK1300-E Silicon N Channel MOS FET dual power mosfet Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate ...
Guangdong, china
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TDA2030A LINEAR INTEGRATED CIRCUIT 18W HI-FI AUDIO AMPLIFIER AND 35W DRIVER DESCRIPTION The UTC TDA2030A is a monolithic IC intended for use as low frequency class AB amplifier. ...
Guangdong, china
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BTA16-600BRW 16A TRIACS Triacs Silicon Bidirectional Thyristors Features ■ Medium current triac ■ Low thermal resistance with clip bonding ■ Low thermal resistance insulation ...
Guangdong, china
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MHL18336 PCS BAND RF LINEAR LDMOS AMPLIFIER Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design ...
Guangdong, china
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PNP − MJ15024G Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. ...
Guangdong, china
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NPN 9 GHz wideband transistor BFR520 FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION The ...
Guangdong, china
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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small ...
Guangdong, china
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4104 High Power Switching Applications Hammer Drive, Pulse Motor Drive and ...
Guangdong, china
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2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ...
Guangdong, china
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General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or ...
Guangdong, china
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SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) ...
Guangdong, china
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TMOS E–FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM This advanced TMOS E–FET is designed to ...
Guangdong, china
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TC74VHC11FT TRIPLE 3-INPUT AND GATE low cost audio amplifier Triple 3-Input AND Gate The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate ...
Guangdong, china
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PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ...
Guangdong, china
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CNY74-2 Power Mosfet Transitor Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a ...
Guangdong, china
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4N33M General Purpose 6-Pin Photodarlington Optocoupler MOS Field Effect Transistor Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered ...
Guangdong, china
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS ...
Guangdong, china
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