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EMD3T2R Power Mosfet Module Transistor General purpose ( Dual Digital Transistors )

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[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

General purpose (dual digital transistors)

EMD3 / UMD3N / IMD3A

Features

1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

3) Transistor elements are independent, eliminating interference.

4) Mounting cost and area can be cut in half.

Structure

Epitaxial planar type

NPN / PNP silicon transistor (Built-in resistor type)

The following characteristics apply to both the DTr1 and DTr2, however, the “−” sign on DTr2 values for the PNP type have been omitted.

Absolute maximum ratings (Ta=25°C)

Parameter		Symbol	Limits	Unit
Supply voltage		V_CC	50	V
Input voltage		V_IN	-10	V
Input voltage		V_IN	40	V
Output current		I_O	50	mA
Output current		I_{C (Max.)}	100	mA
Power dissipation	EMD3, UMD3N	Pd	150 (TOTAL) *1	mW
Power dissipation	IMD3A	Pd	300 (TOTAL) *2	mW
Junction temperature		Tj	150	˚C
Storage temperature		Tstg	−55 to +150	˚C

*1 120mW per element must not be exceeded.

*2 200mW per element must not be exceeded.

Equivalent circuits

External dimensions (Unit : mm)

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