Results forgan 2 inch waferfrom 990 Products.
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2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) ...
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer About GaN Feature Introduce The growing demand ...
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2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows Properties of GaN 1) At room temperature, ...
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API/ DIN Standard/ Cast Iron Material/ PN1.0/ PN1.6Mpa Pinless Wafer Butterfly Valve Introduce The butterfly plate of the handle butterfly valve is installed in the diameter ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...
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8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application GaN epitaxial wafer (GaN EPI on Silicon) ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. ...
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API/ DIN Standard/ Cast Iron Material/ PN1.0/ PN1.6Mpa Pinless Wafer Butterfly Valve Introduce The butterfly plate of the handle butterfly valve is installed in the diameter ...
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer, GaN Specifications/Special Features: Gallium nitride (GaN...
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LD,10x10mm size GaN chips,HVPE GaN wafer About GaN Feature Introduce The growing demand for high-speed...
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5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device...
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LD,10x10mm size GaN chips,HVPE GaN wafer About GaN Feature Introduce The growing demand for high-speed...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two...
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a ...
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