Results forgallium oxide substrate 10x15mmfrom 847 Products.
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates About GaN-on-GaN Feature Introduce ...
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2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows Properties of GaN 1) At room temperature, ...
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High Temperature Electronic Aluminum Oxide Al2O3 Ceramics Substrate Board Plate Properties: The ceramic substrate has the main advantages of high temperature resistance, high ...
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2inch GaAs (111) Si-doped substrates Overview Gallium in a GaAs Wafer is in general used in the production of semiconductors, barometers, light emitting diodes, thermometers and ...
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4'' 200nm AlScN Template On Silicon SSP DSP Epitaxial Substrates for LED Devices Features: Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on ...
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Magnesium oxide(100)＆(110)Orientation MgO Single Crystal substrates by size 10x10x0.5mmt or 2inch x0.5mmt MgO single crystal as the dielectric constant and loss microwave band is ...
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10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Resistance<9E18Ω/cm-3 Optoelectron...
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customized orientation 2inch SSP Sapphire carrier substrate chip for GaN template grow application Sapphire wafer carriers are manufactured to exacting specifications and offer a ...
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VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Welcome to Know AlN Template on Diamond~~ Advantages of AlN • ...
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Aluminum nitride (AlN) is one of the few non-metallic materials ...
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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4'' 6'' AIN On Silicon Substrates SSP DSP Semiconductor Wafers 100nm 200nm Layer Description: Aluminum Nitride on Silicon Wafers is a new type of semiconductor material that offers ...
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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LaAlO3 substrates,10X10mm small square Lanthanum aluminate LaAlO3crystal substrate single crystals ---------------------------------------------------------------------------------...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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