Results forgallium oxide substrate 10x15mmfrom 847 Products.
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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High efficiency high temperature resistance Alumina ceramic substrate 1. Description of Alumina ceramic substrate Alumina or aluminum oxide (Al2O3) in its various levels of purity ...
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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LSAT Lanthanum-Strontium Aluminium Tantalate Crystal Substrates LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 is a newly developing crystal with peroviskite structure and twin-free. LSAT has ...
china
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Gadolinium gallium garnet (GGG) In optical communication equipment, 1.3 μ And 1.5 μ The core part of the optical isolator is YIG or big film placed in magnetic field. The GGG ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Aluminum nitride (AlN) is one of the few non-metallic materials ...
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95% High Purity Aluminum Oxide Ceramic Substrate 200*200*1mm For Insulation Material 1. Description Alumina ceramic is kind of structural ceramics, with insulation resistance, ...
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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Magneto-optical Crystal Gadolinium Gallium Garnet ( GGG ) Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) is a synthetic crystalline material of the garnet group, with good mechanical, ...
china
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4'' 6'' AIN On Silicon Substrates SSP DSP Semiconductor Wafers 100nm 200nm Layer Description: Aluminum Nitride on Silicon Wafers is a new type of semiconductor material that offers ...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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LaAlO3 substrates,10X10mm small square Lanthanum aluminate LaAlO3crystal substrate single crystals ---------------------------------------------------------------------------------...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
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3inch VGF GaAs wafers Research test grade N-Type GaAs substrates 425um 2inch 3inch 4inch 6inch VGF method N-Type un-doped GaAs substrates 2degree off 675um SSP DSP GaAs wafers ----...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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