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2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows Properties of GaN 1) At room temperature, ...
Shanghai, china
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
Shanghai, china
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QPA2933 RF Amplifier 2.9-3.3GHz 60W GaN PA OVM Qorvo QPA2933 S-Band 60W GaN Power Amplifier Qorvo QPA2933 S-Band 60W GaN Power Amplifier is optimized for 2.9GHz to 3.3GHz, ...
china
Verified
Product Description: GT-UVV-LW GaN UV Sensor Is Used For UV-curing Monitoring Gas Pollutants Detection Features: General Features: l Indium Gallium Nitride Based Material l ...
china
Verified
Product Description: Aluminum Nitride Ceramic Product Overview GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed ...
Jiangsu, china
Verified
65W Removealbe Plug USB C GaN Charger with PPS/QC3.0/QC4.0/QC4.0+ Technology UL CE PSE Certified Experience fast and efficient charging with the cutting-edge 65W GaN Charger. This ...
Guangdong, china
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), ...
Fujian, china
Member
customized orientation 2inch SSP Sapphire carrier substrate chip for GaN template grow application Sapphire wafer carriers are manufactured to exacting specifications and offer a ...
Shanghai, china
Verified
Product Description: GT-UV405-LW GaN UV Sensor Is Used For UV Smoke Detection In UV Aging Box Features: Indium Gallium Nitride Based Material l Photovoltaic mode operation l TO-46 ...
china
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10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN)...
Fujian, china
Member
customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
Shanghai, china
Verified
2 Inch Mg-Doped GaN Thin Films On Sapphire Substrates For GaN Power Device PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
Fujian, china
Member
SD customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area Diamond has wide band gap, high thermal conductivity, high breakdown field strength, high ...
Shanghai, china
Verified
2 Inch Undoped GaN On Sapphire Substrates For LEDs And Solid-State Lighting Tech PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum ...
Fujian, china
Member
10x15mm 100 Orientation Gallium oxide GaO substrate 100 orientation with Fe doped 10x15mm Gallium oxide GaO substrate 100 orientation 10x10mm Gallium oxide substrate monocline ...
Shanghai, china
Verified
Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum ...
Fujian, china
Member
10x15mm 001 Gallium oxide GaO substrate Mg doping 10x10mm Gallium oxide substrate monocline structure ------------------------------------------------------------------------------...
Shanghai, china
Verified
4 Inch Mg-Doped GaN Material On C(0001) Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum ...
Fujian, china
Member
10x15mm 001 Gallium oxide GaO substrate Mg doping 10x10mm Gallium oxide substrate monocline structure ------------------------------------------------------------------------------...
Shanghai, china
Verified
4 Inch Undoped GaN On Flat Or Patterned Sapphire Substrates For Visible LEDs PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
Fujian, china
Member
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