Home Products Electronic Components & Supplies Passive Components

8 single crystal wafer

Refine Search
Results for8 single crystal waferfrom 3979 Products.
Gadolinium Gallium Garnet (GGG) single crystal is material with good optical, mechanical and thermal properties which make it promising for use in fabrication of various optical ...
Anhui, china
Verified
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi...
Shanghai, china
Verified
Product Description: Single crystal sapphire is widely used due to its excellent optical, thermal and mechanical characteristics. Firstly, it has an excellent light transmission, ...
Shanghai, china
Verified
Ultra-thin 2inch sapphire DSP wafers thickness 100um 0.1mm Why Sapphire? One of the hardest materials available Superior IR & UV transmission compared to other optical materials ...
Shanghai, china
Verified
MgO wafer produced by arc melting method for making ferroelectric thin film , high Tc superconductor We provides high quality single crystal MgO wafer produced by arc melting ...
Henan, china
Member
2 inch to 8 inch Piezoelectric Wafer LN LT Quartz with Laser Marking for Piezo and SAW Use The root of piezoelectric effect is the displacement of ion charge in the crystal. When ...
Shanghai, china
Verified
Customized Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Crystro can customize Surface Acoustic Piezoelectric Wafers including : Lithium Niobate,Lithium Tantalate,Quartz ...
china
Verified
4-inch silicon wafer MEMS devices, integrated circuits,dedicated substrates for discrete devices A silicon wafer is a material essential for manufacturing semiconductors, which are ...
Shanghai, china
Verified
Product Description: Single crystal sapphire is widely used in diverse fields due to its excellent mechanical characteristics and heat resistance. It provides excellent light ...
Shanghai, china
Verified
Ultra-thin 2inch sapphire DSP wafers thickness 100um 0.1mm 2inch 100um Ultra Thin sapphire wafers 0.1mm Thickness C-plane DSP Sapphire wafer Why Sapphire? FEATURES OF SINGLE ...
Shanghai, china
Verified
MgO wafer produced by arc melting method for making ferroelectric thin film , high Tc superconductor We provides high quality single crystal MgO wafer produced by arc melting ...
Henan, china
Verified
Double Side Polished High-Performance Sapphire Al2O3 Crystal Substrate Ultrathin 2" 3" 4" Sapphire wafers are the epitome of modern semiconductor technology, renowned for their ...
Shanghai, china
Verified
7-inch SOI epitaxial wafer for MEMS processing Overview A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices ...
Shanghai, china
Verified
CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are single-crystal silicon carbide ...
Shanghai, china
Verified
GaAs SubstratesUltra-thin 8inch sapphire DSP/SSP wafers thickness 100um 0.1mm 8inch 200mm Ultra Thin sapphire wafers 0.1mm-50mm Thickness C-plane DSP Sapphire wafer Material: ...
Shanghai, china
Verified
Product Description: 8-inch LiNbO3 wafers refer to the specific size of LiNbO3 crystal substrates commonly used in the fabrication of optoelectronic devices and integrated circuits...
Shanghai, china
Verified
2'' 4'' InP Wafer Indium Phosphide Wafer Semiconductor Substrates 350um 650um Description of InP wafer: InP (Indium phosphide) chips are a commonly used semiconductor material for ...
Shanghai, china
Verified
Ultra-thin 3inch sapphire DSP wafers thickness 430um 0.43mm 3inch 430um Ultra Thin sapphire wafers 0.1mm Thickness C-plane M-plane DSP Sapphire wafer Why Sapphire? FEATURES OF ...
Shanghai, china
Verified
AT ST Cut Quartz Crystal Round Blanks and Wafer Piezoelectric materials exhibit a directionally related electric charge when subjected to pressure and conversely the application of ...
Shanghai, china
Verified
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
Shanghai, china
Verified
Page 49 of 50 |< << 40 41 42 43 44 45 46 47 48 49 50 >> >|