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Arc Melting Method MgO Wafer For Ferroelectric Thin Film High Tc Superconductor

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

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Arc Melting Method MgO Wafer For Ferroelectric Thin Film High Tc Superconductor

Country/Region china
City & Province zhengzhou henan
Categories Refractory
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Product Details

 

MgO wafer produced by arc melting method for making ferroelectric thin film , high Tc superconductor

 

We provides high quality single crystal MgO wafer produced by arc melting method for making ferroelectric thin film , high Tc superconductor as well as for optoelectronics applications in maximum diameter up to 2 inch . MgO wafer can be fabricated in round or square shape , with a SEMI flat or without flat , one side polished or two sides polished , size from 10 x10 mm to 2 " , thickness range from 0.4 , 0.5 , 1 to 2 mm , surface are epi polished with low surface roughness . We have twin free and defect free MgO substrate with various orientation <100> , <110> and <111> , and high precision surface finish , please contact us for more product information .

 

MgO Wafer Application

 

High Tc SuperconductorMicroelectronics device
Optoelectronics deviceMicrowave device

 

MgO Wafer Properties

 

Chemical formulaMgO
Crystal structureCubic
Lattice constant4.212 A
Dielectric constant9.8
Thermal expansion12.8
Density3.58

Product Specification

 

GrowthArc Fusion
DiameterØ 1" / Ø 2"
Size10 x 10 / 20 x 20 / 30 x 30 / 40 x 40 mm
Thickness0.5 mm / 1 mm
Orientation<100> / <110> / <111>
Surfaceone side polished / two sides polished
TTV<= 10 um
RoughnessRa <= 10 A
PackageSingle wafer container
 

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