Results for2sc2712 gr bipolar transistorsfrom 22912 Products.
|
The 2SC2712-GR(TE85L,F,from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a ...
china
|
|
|
|
|
ZTX951STZ Bipolar Transistors BJT PNP Big Chip SELine Product Attribute Attribute Value Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details ...
|
|
|
|
|
PBSS4350X115 Single Bipolar Transistor IC Chip 3A Current Collector Ic Max SOT89 Series #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#2196ed;font...
|
|
|
|
|
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED ...
|
|
|
|
|
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
china
|
|
|
|
|
BCP56-16T1G Bipolar Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223 Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package can be soldered ...
|
|
|
|
|
ZXTP19100CGTA Diodes Incorporated Bipolar Transistors 1. Features BVCEO > -100V BVECO > -7V IC = -2AHigh Continuous Current Low Saturation VoltageVCE(sat) < -130mV @ -1ARCE(sat) ...
|
|
|
|
|
New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated ...
china
|
|
|
|
|
Single transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN ...
|
|
|
|
|
DTD123ECT116 Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Surface Mount SST3 Product Attributes of DTD123ECT116 TYPE DESCRIPTION Category Discrete Semiconductor Products ...
|
|
|
|
|
2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable ...
|
|
|
|
|
High-Quality BC337-40 NPN Bipolar Transistors for General Purpose Applications Enhance your electronic circuits with the STMicroelectronics BC337-40 NPN Bipolar Transistors. These ...
china
|
|
|
|
|
BFT92 Bipolar Transistors - BJT Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION Part number # BFT92 is manufactured by Infineon Technologies and distributed by ...
china
|
|
|
|
|
MMUN2233LT1G Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar ...
china
|
|
|
|
|
Product:General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A contains nine ...
|
|
|
|
|
ROHM UTC ICS 2SC4505 T100Q Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar ...
china
|
|
|
|
|
ULN2803ADWR TRANS 8NPN DARL 50V 0.5A 18SO Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Mfr Texas Instruments Series Automotive, AEC...
|
|
|
|
|
2SC6026MFVGR,L3F Chipscomponent Electronic Components IC Chips Bipolar transistor - Bipolar junction transistor (BJT) VESM PLN Category Integrated Circuits (ICs) Mfr Analog Devices ...
china
|
|
|
|
|
Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor ...
|
|
|
|
|
MMBT4401LT1G Bipolar Transistors BJT 600mA 60V NPN Single Voltage 40V Lead Free Electronic Components supplier As a professional electronic components distributor we can supply ...
china
|
|
|
You may also be interested in :
