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BC337-40 Transistor IC Chip NPN Bipolar Transistor General Purpose

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BC337-40 Transistor IC Chip NPN Bipolar Transistor General Purpose

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Product Details

High-Quality BC337-40 NPN Bipolar Transistors for General Purpose Applications


Enhance your electronic circuits with the STMicroelectronics BC337-40 NPN Bipolar Transistors. These high-quality through-hole transistors are designed for general-purpose applications, offering reliable and versatile performance. The BC337-40 features a single NPN configuration and comes in a TO-92-3 package, ensuring easy integration into various circuit designs. It has a maximum collector-emitter voltage (VCEO) of 45V, collector-base voltage (VCBO) of 50V, and emitter-base voltage (VEBO) of 5V.

 

STMicroelectronics BC337-40 - Reliable and Versatile NPN Bipolar Transistors

 

With a maximum DC collector current of 500mA and continuous collector current of 800mA, these transistors can handle moderate power requirements. The BC337-40 has a power dissipation (Pd) of 625mW, allowing for efficient heat dissipation. These bipolar transistors exhibit a gain bandwidth product (fT) of 100MHz, enabling high-frequency applications. With a DC current gain (hFE) ranging from 250 to 600, they provide reliable amplification and switching capabilities.

 

The STMicroelectronics BC337-40 transistors are manufactured by a trusted brand known for its quality and reliability. They are available in bulk packaging, making them suitable for various project sizes.

 

Technical Features:

FeatureSpecification
Transistor PolarityNPN
ConfigurationSingle
Collector-Emitter Voltage45 V
Collector-Base Voltage50 V
Emitter-Base Voltage5 V
Maximum DC Collector Current500 mA
Pd - Power Dissipation625 mW
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+150°C
SeriesBC337
PackagingBulk
BrandSTMicroelectronics
Continuous Collector Current800 mA
DC Collector/Base Gain hfe Min250
DC Current Gain hFE Max600
Height4.95 mm
Length4.95 mm
Product TypeBJTs - Bipolar Transistors

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