MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

 
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
 
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
 
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
 
• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
 
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
 
PACKAGE DIMENSIONS

 
 
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