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SAW Grade Doping Lithium Niobate Wafer MgO Er Fe Doped LT Optical Grade

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

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SAW Grade Doping Lithium Niobate Wafer MgO Er Fe Doped LT Optical Grade

Country/Region china
Categories Bromide
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Product Details

SAW Grade Doping Lithium Niobate Wafer MgO Er Fe Doped LT Optical Grade


LiNbO3 is a nonlinear optical grade crystal,MgO-doped LiNbO3 can effectively increase the damage threshold of the LiNbO3 crystal.

Lithium Niobate(LiNbO3) crystals are widely used in optical communication, information processing, integrated optics, image storage, harmonic generation, frequency doubling devices, parametric oscillations, frequency multiplication of 1064nm lasers and quadruple frequency phase matching device etc.

 

Crystro provides:

  • LiNbO3 wedges used for fiber optical isolators and circulators.
  • Reliable delivery
  • Strict quality control
  • Technical support
  • Very competitive prices

Basic Properties of LiNbO3:

 

Growth methodCzochralski method
Crystal structureTrigonal system
Lattice constanta=b=5.148Å c=13.863 Å
Melting point1250℃
Curie temperature1142 ℃
Density4.64 g/cm3
Mohs Hardness5
Spectral transmission range0.4-2.9um
Refractive indexNo=2.286 ne=2.203 (632.8nm)
Nonlinear coefficientD33=34.45, d31=d15=5.95, d22=13.07 (PMV-1)
Electro-optic coefficientγ13=8.6,γ22=3.4,γ33=30.8,γ51=28.0,γ22=6.00(pmv-1)
Spectral transmission range370 - 5000nm >68% (632.8nm)
Thermal expansion coefficientA11=15.4 x 10-6/k, a33=7.5 x 10-6/k

 

Crystro can offer:

 

Material3" 4" 6" 8" LN wafer (Saw/Optical grade)
OrientationX / Z / Y41° / Y64° / Y128° / YZ / YX or Customized
Curie Temp1142°C±3°C
Doped withEr, MgO, single or double doped available
Surface finish

single or double sides polish

(DLP/SLP/ SSP/DSP all available)

Thickness0.18/0.25/0.35/0.50/1.00 + mm
TTV< 1~5µm
BOW± (25µm ~40um )
Warp<= 35µm
LTV (5mmx5mm)<1.5 um
PLTV(<0.5um)≥98% (5mm*5mm) with 2mm edge excluded
EdgeCompl't with SEMI M1.2@with GC800# .regular at C typed
Orientation flatsavailable, per request
Polished side RaRoughness Ra<=5A
Back Side CriteriaRoughness Ra:0.5-1.0µm GC#1000
Edge RoundingCompliant with SEMI M1.2 Standard/refer to IEC62276
Cracks, saw marks, stains

None

 

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