Active Member
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[China]
Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN
Contact name:Walton-cara
Walton Electronics Co., Ltd. |
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FCB36N60NTM MOSFET Transistors Discrete Semiconductors original
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SC-70-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 36 A |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 112 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 312 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Configuration: | Single |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 41 S |
| Height: | 4.83 mm |
| Length: | 10.67 mm |
| Product Type: | MOSFET |
| Rise Time: | 22 ns |
| Series: | FCB36N60N |
| Factory Pack Quantity: | 800 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 94 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Width: | 9.65 mm |
| Unit Weight: | 4 g |
