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10x10x0.5mm SiC 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, demand for ...
Shanghai, china
Verified
2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic ...
Shanghai, china
Verified
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% ...
Shanghai, china
Verified
10x10x0.5mm SiC 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 2inch 0.33mm 0.43mm 6H-N 4H-N SiC substrates Silicon Carbide sic Wafer High crystal quality for demanding power ...
Shanghai, china
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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer About ...
Shanghai, china
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Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0μm± 25.0 μm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner ...
Shanghai, china
Verified
4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices SiC ...
Shanghai, china
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Customized size 2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers/4 inch 4h-N type ...
Shanghai, china
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For ...
Shanghai, china
Verified
High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES ...
Shanghai, china
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High Quality Silicon-on-Insulator Wafers SIC Silicon Carbide Wafers Customized High quality high precision Dia.700mm Sic spherical Mirror metal optical reflector Customized High ...
Shanghai, china
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CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are single-crystal silicon carbide ...
Shanghai, china
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HPSI 4H-SEMI transparent colorless customized sic lens high purity Application of silicon carbide in power device industry Performance Unit Silicon Si Silicon Carbide SiC Gallium ...
Shanghai, china
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High purity HPSI 4H-SEMI 4H-N 10X10mm 5x5mm sic wafers DSP transparent sic crystal optical lens 4H-SEMI by customzied size Application of silicon carbide in power device industry ...
Shanghai, china
Verified
8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
Shanghai, china
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2inch dia50.8mm 330μm thickness 4H-N Type SiC substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating ...
Shanghai, china
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2inch Dia50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal 2inch dia50mm 330μm thickness 4H N-Type SiC substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N...
Shanghai, china
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6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm 4H Semi SiC Substrate Research Grade Single Crystal 2inch dia50mm 330μm thickness ...
Shanghai, china
Verified
4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers About GaN-on-GaN GaN-on-SIC Feature Introduce GaN epitaxial wafer: According to the different substrates, it is ...
Shanghai, china
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4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers 6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm ...
Shanghai, china
Verified
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