Results forsi face cmp sic epitaxial waferfrom 1268 Products.
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single sic wafer 4Inch prime research dummy Grade 4H-N...
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2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,HVPE Gallium Nitride wafer,AlN templates III-Nitride(GaN,AlN,InN) Forbidden band width (light emitting ...
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ASTM B366 UNS N10276 Hastelloy Nickel Alloy Steel Weld Neck Raised Face Flange Specifications – ASTM B366 UNS N10276 Hastelloy C276 ASTM B619, B366, B564 ASME SB619, SB366, SB564 ...
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Silicon Wafer Back Grinding Wheel Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding ...
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4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a ...
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6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates Silicon carbide coated epitaxial sheet tray used in epitaxial furnace equipment/Silicon ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Aluminum nitride (AlN) is one of the few non-metallic materials ...
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Silicon Wafer Back Grinding Wheel Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding ...
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) ...
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2inch 5um thickness AlN Aluminum Nitride Template on 430um sapphire/ 350um Sic substrates AlN Wafer Characteristic III-Nitride(GaN,AlN,InN) 2inch AlN template on sapphire or sic ...
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Welcome to Know AlN Template on Diamond~~ Advantages of AlN • ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
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