Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDN338P MOSFET Power Electronics High Performance Reliable Power Supply Solution TO-236-3
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 115mOhm @ 1.6A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 451 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case |
The FDN338P is a high-power N-Channel enhancement-mode MOSFET with a TO-236-3 package. It is designed for low voltage, high current, high-speed switching applications. It features low on-state resistance, high-frequency operation and low gate drive power. With a drain-source breakdown voltage of 100V, this MOSFET can handle an output voltage of up to 80V. The high current capability of the FDN338P allows it to support high efficiency and power density applications. The fast switching speeds of the MOSFET and high input impedance enable high-speed operation and low switching losses. The TO-236-3 package provides a space-saving footprint for the MOSFET, making it suitable for high-density applications. The FDN338P is suitable for use in automotive, industrial, and consumer applications.
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