Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDN327N MOSFET Power Electronics Device in TO-236-3 Package High Power Applications N-Channel
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 423 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | SOT-23-3 | |
| Package / Case |
The FDN327N is a N-Channel Enhancement Mode Power MOSFET, designed for use as a load switch in low voltage, low current applications. It is housed in a TO-236-3 package and features a low on-resistance of 0.45 ohms, making it suitable for DC-DC converters, portable devices, and other applications. The FDN327N is a low power consumption device, with a maximum drain current of 1A and a maximum drain-source voltage of 70V. It is also ESD-protected, making it suitable for applications in which electrical noise and ESD immunity are important. The device also has a fast switching speed, low gate charge, and low input capacitance, making it suitable for high-frequency switching applications.
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