Shenzhen Sai Collie Technology Co., Ltd. |
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Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 6.5A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
Product Listing:
ON Semiconductor FDMC86102LZ N-Channel Power MOSFET
Features:
• Low On-Resistance RDS (on)
• Low Gate Threshold Voltage
• Low Input Capacitance
• RoHS Compliant
• Halogen and Antimony Free Available
Specifications:
• Drain-Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 11A
• RDS (on): 9.3mΩ
• Gate Threshold Voltage (Vgs(th)): 1.8V
• Input Capacitance (Ciss): 710pF
• Power Dissipation (Pd): 3.5W
• Operating Temperature (Tj): -55°C to 175°C
• Mounting Type: Surface Mount