Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 255mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 1W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-SOIC | |
Package / Case |
Product Listing:
FDS86267P - N-Channel Power MOSFET by ON Semiconductor
• Breakdown Voltage: 30V
• Drain-Source On-State Resistance: 6.2mΩ
• Continuous Drain Current: 65A
• Rds(on) Max: 6.2mΩ
• Input Capacitance: 990pF
• Threshold Voltage: 2.3V
• Power Dissipation: 180W
• Operating Temperature: -55°C to +150°C
• Mounting Type: Surface Mount
