Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 480mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case |
Product Listing:
ON Semiconductor NTR4171PT1G - N-Channel Power MOSFET
• Vds - Drain to Source Voltage: 100V
• Id - Continuous Drain Current: 4.1A
• Rds - Drain to Source On-State Resistance: 0.29 Ohms
• Vgs - Gate to Source Voltage: ±20V
• Vth - Threshold Voltage: 4.0V
• Pd - Power Dissipation: 2.8W
• Gate Charge: 11.5nC
• Input Capacitance: 236pF
• Output Capacitance: 77pF
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Through Hole
