Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 10Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 79 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 360mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case |
NDS0610 Power MOSFET from ON Semiconductor
Features:
- N-channel enhancement mode
- Low on-resistance
- Low gate charge
- Avalanche energy rated
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Fast switching
- Low gate input resistance
- Low thermal resistance
Specifications:
- Drain-Source Voltage (Vds): 60V
- Drain-Source Breakdown Voltage (Vbr): 67V
- Drain Current (ID): 8.5A
- Drain-Source On-Resistance (Rds): <0.062Ω
- Gate-Source Voltage (Vgs): ±20V
- Gate Threshold Voltage (Vth): 2.2V
- Power Dissipation (Pd): 11.25W
- Operating Temperature: -55°C to 175°C
- Mounting Type: Surface Mount
- Package/Case: TO-252-3
