Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 1.15A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-223-4 | |
Package / Case |
Product Listing:
IRFM120ATF Power MOSFET from ON Semiconductor
Product Parameters:
• Technology: Power MOSFET
• Package: TO-220AB
• Type: N-Channel
• Configuration: Single
• Drain-Source Voltage (VDS): 100V
• Drain-Gate Voltage (VGD): 20V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 12A
• Pulsed Drain Current (IDM): 24A
• On-Resistance (RDS(on)): 0.02Ω
• Maximum Power Dissipation (PD): 140W
• Operating Temperature Range: -55°C to +150°C
• Mounting-Type: Through Hole
