Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDMS8333L MOSFET Power Electronics N-Channel PowerTrench® 40 V 76 A 3.1 mΩ Package 8-PQFN
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.1mOhm @ 22A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4545 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Features:
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high
efficiency
Next generation enhanced body diode technology, engineered for
soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description:
This N-Channel MOSFET has been designed specifically to improve the
overall efficiency and to minimize switch node ringing of DC/DC
converters using either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on), fast switching speed and body diode reverse recovery
performance.
Applications:
OringFET / Load Switching
Synchronous rectification
DC-DC Conversion
res
