Shenzhen Sai Collie Technology Co., Ltd. |
|
FDN357N MOSFET Power Electronics SOT-23-3 Package N-Channel Logic Level Enhancement Mode
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case | ||
Base Product Number |
General Description
SUPERSOT−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.
Features
• 1.9 A, 30 V
♦ RDS(ON) = 0.09 @ VGS = 4.5 V
♦ RDS(ON) = 0.06 @ VGS = 10 V
• Industry Standard Outline SOT−23 Surface Mount Package Using
Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical
Capabilities
• High Density Cell Design for Extremely Low RDS(ON)
• Exceptional On−Resistance and Maximum DC Current Capability
• This Device is Pb−Free and is RoHS Compliant
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