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semiconductor wafer chip 6x7mm

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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
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2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer Indium phosphide (InP) is an important compound semiconductor material with the advantages of high ...
Shanghai, china
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
Shanghai, china
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
Shanghai, china
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4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in ...
Shanghai, china
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2INCH 6H-semi Silicon Carbide sic Wafer 330um dummy research grade Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch ...
Shanghai, china
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4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ...
Shanghai, china
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8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of ...
Shanghai, china
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8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of ...
Shanghai, china
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SapphiLarge Thickness Thermal Oxide (SiO2) On Silicon Wafers For Optical Communication System Generally, the oxide layer thickness of silicon wafers is mainly concentrated below ...
Shanghai, china
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Semi-Insulating 3-Inch Silicon Carbide wafer 4H N-Type CVD Orientation : 4.0°±0.5° Semi-Insulating 3-Inch Silicon Carbide wafer's Abstract The unique electronic and thermal ...
Shanghai, china
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4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in ...
Shanghai, china
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2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline Introduce of InAs substrate Indium InAs or indium mono-arsenide is a semiconductor composed ...
Shanghai, china
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Abstract The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal ...
Shanghai, china
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GaP Wafer, Gallium Phosphide single crystal Orientation (111)A 0°±0.2 Solar Cells Product Description: Gallium Phosphide GaP, an important semiconductor of unique electrical ...
Shanghai, china
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Silicon wafer 4 inch thickness 500+/-20 Resistivity 1-10 ohm·cm Orientation100 double side polish Product abstract Our Precision Ultra-Pure Silicon Substrate is meticulously ...
Shanghai, china
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dia50.8mm 2inch 1inch AlN substrate/AlN single crystal wafers 10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers Applications of ...
Shanghai, china
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2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate 2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices Applications of AlN template ...
Shanghai, china
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2inch 3inch 4inch LNOI LiNbO3 Wafer Lithium Niobate Thin Films Layer On Silicon Substrate LNOI wafer preparation process is shown below, including the following five steps: (1) Ion ...
Shanghai, china
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