Abstract

The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices.

Key features of the 4-H Semi-Insulating SiC substrate include highly uniform electrical properties, low impurity concentration, and outstanding thermal stability. These attributes make it suitable for the fabrication of high-frequency RF power devices, high-temperature electronic sensors, and microwave electronic equipment. Its high breakdown field strength and excellent thermal conductivity also position it as the preferred substrate for high-power devices.

Furthermore, the 4-H Semi-Insulating SiC substrate demonstrates excellent chemical stability, allowing it to operate in corrosive environments and expanding its range of applications. It plays a critical role in industries such as semiconductor manufacturing, telecommunications, defense, and high-energy physics experiments.

In summary, the 4-H Semi-Insulating SiC substrate, with its outstanding electrical and thermal properties, holds significant promise in the semiconductor field and provides a reliable foundation for the production of high-performance electronic devices.

Properties

Electrical Properties:

1. High Resistivity: 4H Semi-Insulating SiC has very high resistivity, making it an excellent material for semi-insulating applications where low electrical conductivity is desired.
2. High Breakdown Voltage: Due to its wide bandgap, 4H Semi-Insulating SiC has a high breakdown voltage, making it suitable for high-power and high-voltage applications.

Thermal Properties:

1. High Thermal Conductivity: SiC in general has high thermal conductivity, and this property extends to 4-H Semi-Insulating SiC as well, aiding in efficient heat dissipation.
2. Thermal Stability: This material maintains its properties and performance even at high temperatures, making it suitable for use in harsh thermal environments.

Mechanical and Physical Properties:

1. Hardness: Like other forms of SiC, the 4-H Semi-Insulating variant is also very hard and abrasion-resistant.
2. Chemical Inertness: It is chemically inert and resistant to most acids and alkalis, ensuring stability and longevity in harsh chemical environments.

Optical Properties:

1. Transparency in Infrared: 4H Semi-Insulating SiC is transparent to infrared light, which can be beneficial in certain optical applications.

Advantages for Specific Applications:

1. Electronics: Ideal for high-frequency and high-power devices due to its high breakdown voltage and thermal conductivity.
2. Optoelectronics: Suitable for optoelectronic devices that operate in the infrared region.
3. Power Devices: Used in the manufacturing of power devices such as Schottky diodes, MOSFETs, and IGBTs.

4H Semi-Insulating SiC is a versatile material that is used in various high-performance applications due to its exceptional electrical, thermal, and physical properties.

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