Results forp grade silicon carbide crystalfrom 98 Products.
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6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic ...
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10x10mm 5x5mm customized square sic substrates ,1inch sic wafers,sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer ----------------...
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconducto...
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC ...
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0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially ...
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than ...
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures ...
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Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over ...
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JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects ...
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JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost ...
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SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th ...
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SiC seed crystal S grade 6" S grade φ153±0.5mm SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room ...
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SiC seed crystal S grade 6" S grade φ153±0.5mm SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche ...
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SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent ...
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, ...
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For ...
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4H N Type SiC (Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for ...
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On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and ...
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4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic ...
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4H High Purity Semi Insulating SiC Carbide Wafer , Dummy Grade, Epi Ready,2”Size PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality ...
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