SIC Silicon Carbide Wafer 4H - N Type For MOS Device 8inch Dia200mm

2inch 4/6inch dia200mm sic seed wafer 1mm thickness for ingot growth High Purity 4 6 8-inch conductive semi-insulation SiC single crystal wafer

Customized size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers/ Customzied as-cut sic wafers production 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal 4inch 6inch seed sic wafer 1.0mm Thickness 4h-N SIC Silicon Carbide Wafer For seed growth

Product Description

SiC Applications

SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, strong voltage breakdown resistance, etc., suitable for the preparation of high frequency, high power, high temperature, and radiation-resistant electronic devices.

1--Silicon carbide wafer is mainly used in the production of SCHOttky diode, metal oxide semiconductor field effect transistor,
junction field effect transistor, bipolar junction transistor, thyristor, turn-off thyristor and insulated gate bipolar
transistor.

2--SiC power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance, and high stability. It is the preferred device in the field of power devices below 300V. There are reports that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that SiC MOSFETs will occupy an advantageous position in the field of 3kV - 5kV.

3--SiC power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance, and high stability. It is the preferred device in the field of power devices below 300V. There are reports that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that SiC MOSFETs will occupy an advantageous position in the field of 3kV - 5kV.