Results forn trench mosfet transistorsfrom 10466 Products.
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SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low ...
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BIDW30N60T IGBT Trench Field Stop 600 V 60 A 230 W Through Hole TO-247 Bourns Model BID Insulated Gate Bipolar Transistors Bourns Model BID Insulated Gate Bipolar Transistors ...
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IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating ...
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TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLICM GROUPON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are ...
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NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN ...
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MPSA42; MPSA43 NPN high-voltage transistors FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Video • Telephony • Professional communication ...
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NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's ...
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PMBT2907; PMBT2907A PNP switching transistors FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP ...
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TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLICM GROUPON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL ...
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NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's ...
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PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020...
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PMBT3906 PNP switching transistor General description PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. ...
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BCP54; BCP55; BCP56 NPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching. DESCRIPTION NPN medium power transistor in ...
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NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field effect transistors are produced ...
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NPN General Purpose Transistor Maximum Ratings ( TA=25°C unless otherwise noted) Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VECO 65 45 30 Vdc Collector-Base ...
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BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's ...
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TOSHIBA Photocoupler GaAs Ired&Photo−Transistor TLP733, TLP734 Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP733 and TLP734 consist ...
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NPN 9 GHz wideband transistor BFR520 FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION The ...
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PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP ...
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED ...
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