Active Member
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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
Absolute Maximum Ratings TA = 25°C unless otherwise noted
| Symbol | Parameter | BS170 | MMBF170 | Unit |
| VDSS | Drain-Source Voltage | 60 | V | |
| VDGR | Drain-Gate Voltage (RGS < 1MW) | 60 | V | |
| VGSS | Gate-Source Voltage | ± 20 | V | |
| ID | Drain Current - Continuous - Pulsed | 500 | 500 | mA |
| 1200 | 800 | mA | ||
| PD | Maximum Power Dissipation Derate Above 25°C | 830 | 300 | mW |
| 6.6 | 2.4 | mW/°C | ||
| TJ ,TSTG | Operating and Storage Temperature Range | -55 to 150 | °C | |
| TL | Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds | 300 | °C | |
| THERMAL CHARACTERISTICS | ||||
| RθJA | Thermal Resistacne, Junction-to-Ambient | 150 | 417 | °C/W |
Switching Test Circuit. Switching Waveforms.
