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The Low Voltage MOSFET is an advanced power management semiconductor that has been specifically designed for applications requiring high efficiency, reliability, and performance in low voltage operations. This product is a staple in the power electronics industry, where it serves a variety of applications from motor drivers to the latest 5G base stations, energy storage systems, high-frequency switches, and synchronous rectification circuits.
The Low Voltage MOSFET is built with a state-of-the-art Structure process: Trench/SGT (Shielded Gate Trench) technology that enhances its performance in critical aspects. The SGT process is particularly beneficial in applications such as motor drivers, where it ensures that the device can handle the high switching frequencies and power densities with ease. Furthermore, the SGT process makes this MOSFET an excellent choice for 5G base stations, which demand high power efficiency and superior thermal management due to the high data rates they handle. Energy storage systems also benefit from the SGT process, as it allows for more compact and efficient designs, while high-frequency switches and synchronous rectification circuits gain from the process's ability to minimize losses and improve response times.
One of the key attributes of the Low Voltage MOSFET is its low Rds(ON) , which stands for low on-state resistance. This characteristic is crucial because it directly impacts the power dissipation of the device, with a lower Rds(ON) translating into lower heat generation and higher efficiency. This feature is particularly important in energy-sensitive applications where every milliwatt of power saving can be crucial.
The Trench process application is another critical aspect of the Low Voltage MOSFET . This process is used in an array of applications including wireless charging and fast charging systems, which benefit from the MOSFET's ability to handle high currents with minimal losses. Motor drivers and DC/DC converters also take advantage of the Trench process's superior switching performance, which is critical for maintaining efficiency and performance. High-frequency switches and synchronous rectification circuits further utilize the Trench process to achieve the fast switching speeds and low on-state resistances required for modern electronic systems.
When it comes to specific types of low voltage MOSFETs, this product includes low gate voltage MOSFET options, which are designed to operate effectively with lower gate drive voltages. This capability is particularly beneficial for battery-powered applications and devices that operate on limited power budgets. By requiring less voltage to turn on, these MOSFETs help to conserve energy and extend the battery life of portable devices.
Additionally, the Low Voltage MOSFET portfolio includes low threshold voltage MOSFET options, enabling the device to begin conducting at lower voltages, which is a significant advantage in circuits that require precise control over the switching thresholds. This feature is essential for applications that operate at the edge of their power supply capabilities, or where it is necessary to maintain a high level of control over the power flow.
In summary, the Low Voltage MOSFET represents a leap forward in power semiconductor technology, combining the latest Trench and SGT processes to offer a product that meets the demanding requirements of contemporary applications. Its low Rds(ON), coupled with its capability to operate at low gate and threshold voltages, makes it an indispensable component in a wide range of electronic systems. Whether it's for powering the next-generation 5G networks, driving efficient motors, managing energy in storage systems, or enabling fast and wireless charging, the Low Voltage MOSFET is engineered to deliver unparalleled performance and efficiency.
| Parameter | Specification |
|---|---|
| Product Name | Low Voltage MOSFET |
| Structure Process | Trench/SGT |
| SGT Process Advantages | Breakthrough FOM Optimization, Covering More Application |
| SGT Process Application | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification |
| Trench Process Advantages | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized |
| Trench Process Application | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification |
| EAS Capability | High EAS Capability |
| Power Consumption | Low Power Loss |
| Resistance | Low Rds(ON) |
| Efficiency | High Efficiency And Reliable |
The REASUNOS Low Voltage MOSFET is an advanced semiconductor device, meticulously engineered for a broad spectrum of product applications where efficient power management is crucial. Originating from Guangdong, CN, these MOSFETs are a testament to high-quality manufacturing processes and meticulous attention to detail. The price of these low voltage field effect transistors is competitive and can be confirmed based on the specific product variant chosen by the customer. Each unit is safeguarded by dustproof, waterproof, and anti-static tubular packaging, ensuring the product's integrity, which is then placed within a sturdy cardboard box before being encased in cartons for additional protection during transit.
REASUNOS prioritizes swift delivery with a turnaround time ranging from 2 to 30 days, depending on the total quantity ordered. The supply capacity stands at an impressive 5KK units per month, catering to both small and large volume requirements. Transactions are seamless and secure with a payment term of 100% T/T in advance (EXW), guaranteeing peace of mind for every client. The high EAS capability of these MOSFETs ensures they are resilient against unexpected voltage spikes, while the low power loss attribute signifies that devices using these components will be energy efficient.
With a structure process that includes Trench/SGT, REASUNOS MOSFETs exhibit high efficiency and reliable performance, making them ideal for a wide array of applications. The SGT process application extends to motor drivers, 5G base stations, energy storage systems, high-frequency switches, and synchronous rectification. These low threshold voltage mosfets are designed to operate effectively even at reduced gate voltages, which allows for greater flexibility in circuit design and power-saving opportunities.
Power electronics designers can leverage the benefits of low gate voltage MOSFETs from REASUNOS in developing energy-efficient consumer electronics, automotive components, and industrial machinery. Whether the task at hand involves intricate computing devices or robust industrial equipment, REASUNOS MOSFETs with their low voltage field-effect properties ensure that every application is powered safely, efficiently, and reliably.
The Low Voltage MOSFET product line is supported by a comprehensive range of technical support and services to ensure optimal performance and reliability. Our team is dedicated to providing expert assistance and resources to help you integrate our MOSFETs into your designs effectively. These services include detailed product datasheets, application notes, design tools, and simulation models to facilitate your development process.
We offer an extensive library of technical documentation to help you understand the features and specifications of our Low Voltage MOSFETs. Our application notes provide guidance on how to use these components in various circuits and applications, ensuring that you can make the most of their capabilities.
For design support, our suite of design tools and simulation models can be accessed to predict the behavior of our MOSFETs in your specific applications. This predictive capability allows for more efficient design cycles and a higher degree of confidence in the end results.
In addition to these resources, our technical support team is available to answer any questions you may have about our products. Whether you need assistance with selection, implementation, or troubleshooting, our experts are here to help you achieve success with our Low Voltage MOSFETs.
The Low Voltage MOSFET product is meticulously packaged to ensure its integrity and quality during transportation. Each MOSFET is individually enclosed in anti-static packaging to safeguard against electrostatic discharge that could compromise the device's performance. The anti-static bag is then placed within a cushioned box that is specifically designed to fit the dimensions of the MOSFET, providing additional protection against physical shocks and vibrations.
The boxed MOSFET units are further organized into larger, durable cartons for bulk handling. These cartons are sealed with heavy-duty adhesive tape and clearly labeled with the product name, specifications, quantity, and handling instructions to facilitate easy identification and proper handling during shipping.
To ensure the safety of the product during transit, the outer cartons are loaded onto pallets and securely shrink-wrapped. The palletized products are then dispatched through trusted courier services with full insurance coverage to protect against any potential damage or loss. Tracking information is provided to the customer to monitor the shipment's progress until the final delivery is safely completed.
