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[China]
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Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province
Contact name:Joan Tian
Reasunos Semiconductor Technology Co., Ltd. |
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The Low Voltage MOSFET is a state-of-the-art semiconductor device tailored to meet the increasing demands for energy efficiency and power density in a wide range of electronic applications. This product is designed using a sophisticated Trench/SGT (Shielded Gate Trench) structure process, which combines the benefits of both the trench technology and the SGT innovation. This unique integration ensures that the Low Voltage MOSFET stands out in the market, providing top-notch performance that is hard to match.
One of the standout attributes of the Trench Low Voltage MOSFET is its smaller RSP (Rdson*Area), which is a direct result of the trench process. The trench technology allows for a more compact cell design, which not only reduces the on-resistance but also minimizes the overall footprint of the MOSFET. This results in a device that can deliver high current density while maintaining a low thermal profile, making it ideal for space-constrained applications where thermal management is critical.
Moreover, the flexibility offered by these devices is unparalleled; both series and parallel configurations can be freely combined and utilized. This versatility ensures that the Trench Low Voltage MOSFET can be adapted to a multitude of circuit designs, enabling engineers to optimize their power management systems for performance, size, or cost, depending on their specific needs.
Another significant advantage of this product is derived from the SGT process, which brings about breakthrough FOM (Figure of Merit) optimization. The FOM is a critical parameter that measures the efficiency of the MOSFET by considering both the on-resistance and the gate charge. By optimizing this parameter, the Low Voltage MOSFET delivers exceptional efficiency, making it suitable for a broad spectrum of applications, ranging from power supplies and DC-DC converters to motor drives and battery management systems.
The SGT process also significantly enhances the EAS (Energy Avalanche and Single Pulse) capability of the MOSFET. High EAS capability implies that the device can withstand high energy pulses without failure, which is particularly important for applications that are prone to transient conditions or require robustness against unexpected voltage spikes. This robustness extends the life of the MOSFET and the overall reliability of the system it is used in.
In terms of power consumption, the Low Voltage MOSFET excels with its low power loss characteristic. Low power loss is critical in today's energy-conscious world, where efficiency directly translates into cost savings and reduced environmental impact. By minimizing the power dissipated as heat, these MOSFETs not only contribute to a greener operation but also reduce the need for elaborate cooling solutions, further conserving space and resources.
The low vgs MOSFET feature is another highlight of this product line. A low gate-source threshold voltage (Vgs) ensures that the MOSFET can operate effectively at lower voltages, which is crucial for battery-powered devices and other applications where power availability is limited. The ability to switch efficiently at low voltages also helps in reducing switching losses, contributing to the overall energy efficiency of the system.
The integration of the Trench and SGT processes in the Low Voltage MOSFET allows for an exceptional combination of low on-resistance, high switching speed, and robustness, making it an excellent choice for designers looking to enhance the performance and reliability of their power management systems. With the capacity to handle both high currents and energy pulses, while maintaining low power consumption and efficient operation at low gate voltages, the Low Voltage MOSFET is a versatile component that covers more applications than ever before.
| Attribute | Description |
|---|---|
| Product name | Low Voltage MOSFET |
| Structure process | Trench/SGT |
| Efficiency | High Efficiency And Reliable |
| SGT process Application | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification |
| SGT process Advantages | Breakthrough FOM Optimization, Covering More Application |
| Power consumption | Low Power Loss |
| Resistance | Low Rds(ON) |
| Trench process Advantages | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized |
| Trench process Application | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification |
| EAS capability | High EAS Capability |
The REASUNOS Low Voltage MOSFET is a high-performance semiconductor device designed for a variety of applications. Engineered with a trench/SGT structure process, it is ideal for scenarios where efficient power management is crucial. This low voltage FET is a staple in industries due to its remarkable EAS capability, ensuring reliability and durability in the most demanding situations. Originating from Guangdong, CN, the REASUNOS brand is synonymous with quality and performance.
With a focus on low power loss, the low voltage power MOSFET is an excellent choice for applications such as wireless charging, providing a seamless and efficient energy transfer. Its low VGS threshold ensures optimal performance in fast charging applications, allowing for quick and efficient energy delivery to devices. In motor driver systems, the REASUNOS Low Voltage MOSFET is instrumental in controlling and managing power with precision, enabling smooth and effective motor operations.
The device is also a perfect fit for DC/DC converters, where its ability to handle high-frequency switching is critical. Its trench process application ensures minimal resistance and heat generation, leading to better efficiency and longer lifespan for power systems. For applications involving synchronous rectification, the REASUNOS MOSFET stands out by minimizing power loss and maximizing conversion efficiency, making it a key component in developing energy-saving power supplies.
Each low voltage MOSFET is meticulously packaged in dustproof, waterproof, and anti-static tubular packaging to ensure the utmost protection during transport. They are then placed inside a cardboard box and secured in cartons for additional safety. With a supply ability of 5KK per month, REASUNOS can meet the demands of both small and large-scale projects. The delivery time ranges from 2 to 30 days, depending on the total quantity ordered.
As for procurement, the REASUNOS brand maintains transparent and straightforward payment terms with a 100% T/T in advance (EXW), ensuring a secure and efficient transaction process. Clients are encouraged to confirm the price based on the specific product configuration they require. This attention to detail and customization options makes REASUNOS a preferred choice for engineers and purchasers alike, looking for a reliable low voltage FET solution for their electronic designs.
Our Low Voltage MOSFET products are supported by a comprehensive technical support and services package designed to provide our customers with the resources they need to successfully implement our components in their applications. Our support includes detailed product documentation, application notes, and design tools to assist in device selection and application optimization.
Technical support is available through an extensive library of online resources, including FAQs, troubleshooting guides, and best practice recommendations. For design and development, we offer simulation models and software to help predict device performance and facilitate circuit design.
We are committed to providing high-quality service to ensure the successful integration of our Low Voltage MOSFET products into your projects. Please note that while we strive to provide comprehensive support, direct contact information is not included in this statement and must be obtained separately.
The Low Voltage MOSFET product will be securely packaged in anti-static material to ensure safe delivery and protection against electrostatic discharge (ESD). Each MOSFET will be individually encased within a protective sleeve, and multiple units will be collectively housed within a sturdy, cushioned box designed to withstand standard shipping conditions.
The exterior of the packaging will be clearly labeled with the product type, handling instructions, and any necessary warnings. The box will be sealed with tamper-evident tape to provide an additional layer of security. For international shipments, all necessary customs documentation will be attached to the outside of the package in a visible and weatherproof enclosure.
Prior to shipping, each package will undergo a final inspection to ensure that the product meets our quality standards and that the packaging is secure. The package will then be dispatched through our trusted logistics provider, and a tracking number will be provided to the customer to allow for real-time monitoring of the shipment until it reaches its destination.
