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mosfet onsemi transistor

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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix ...
Guangdong, china
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BTB16-800CWRG Microelectronic Powerful and Efficient BTB16-800CWRG Microelectronic for Your Electronic Projects Looking for a powerful and efficient microelectronic component that ...
china
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china
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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix ...
Guangdong, china
Member
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz • High ...
Guangdong, china
Member
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz • High ...
Guangdong, china
Member
RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that ...
Guangdong, china
Member
RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that ...
Guangdong, china
Member
RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO Description The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable ...
Guangdong, china
Member
RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO Description The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable ...
Guangdong, china
Member
IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • ...
Guangdong, china
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IRFPC60PBF MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • ...
Guangdong, china
Member
IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • ...
Guangdong, china
Member
IRFPC60PBF MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • ...
Guangdong, china
Member
IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low ...
Guangdong, china
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IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating ...
Guangdong, china
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IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast ...
Guangdong, china
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IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ...
Guangdong, china
Member
IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast ...
Guangdong, china
Member
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ...
Guangdong, china
Member
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