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RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

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Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

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RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications

FEATURES

• High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz

• High Efficiency: 60%typ.on HF Band

APPLICATION

For output stage of high power amplifiers in HF Band mobile radio sets.

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