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JAN2N2222A Microchip / Microsemi Bipolar Transistors - BJT BJTs Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum ...
Guangdong, china
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PBSS4350X115 Single Bipolar Transistor IC Chip 3A Current Collector Ic Max SOT89 Series #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#2196ed;font...
Hunan, china
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
china
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New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated ...
china
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Single transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN ...
Guangdong, china
Verified
DTD123ECT116 Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Surface Mount SST3 Product Attributes of DTD123ECT116 TYPE DESCRIPTION Category Discrete Semiconductor Products ...
Guangdong, china
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2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable ...
Guangdong, china
Verified
High-Quality BC337-40 NPN Bipolar Transistors for General Purpose Applications Enhance your electronic circuits with the STMicroelectronics BC337-40 NPN Bipolar Transistors. These ...
china
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BFT92 Bipolar Transistors - BJT Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION Part number # BFT92 is manufactured by Infineon Technologies and distributed by ...
china
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APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current ...
china
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MMUN2233LT1G Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar ...
china
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Product:General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A contains nine ...
Fujian, china
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ROHM UTC ICS 2SC4505 T100Q Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar ...
china
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ULN2803ADWR TRANS 8NPN DARL 50V 0.5A 18SO Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Mfr Texas Instruments Series Automotive, AEC...
HongKong, china
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2SC6026MFVGR,L3F Chipscomponent Electronic Components IC Chips Bipolar transistor - Bipolar junction transistor (BJT) VESM PLN Category Integrated Circuits (ICs) Mfr Analog Devices ...
china
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Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor ...
Guangdong, china
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MMBT4401LT1G Bipolar Transistors BJT 600mA 60V NPN Single Voltage 40V Lead Free Electronic Components supplier As a professional electronic components distributor we can supply ...
china
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Benchtop Treadle Switch Bipolar Transistor Welder For Lithium-Ion Batteries Equipment introduction ● Adopting self-developed precision welding head, the pressure adjustment control ...
Guangdong, china
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BC847BLT1G Electronic Components Onsemi Bipolar Transistors BJT NPN BC847BLT1G Specifications Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - ...
china
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