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JAN2N2222A Microchip Microsemi Bipolar Transistors BJT BJTs RF Transistors

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JAN2N2222A Microchip / Microsemi Bipolar Transistors - BJT BJTs

Collector- Base Voltage VCBO:	75 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	1 V
Maximum DC Collector Current:	800 mA
Pd - Power Dissipation:	500 mW
Gain Bandwidth Product fT:	-
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Packaging:	Bulk
Brand:	Microchip / Microsemi
Product Type:	BJTs - Bipolar Transistors
	1
Subcategory:	Transistors
Technology:	Si
Unit Weight:	0.081218 oz

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