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BLDC Motors Field Effect Transistor Power Mosfet IPB017N10N5 Infineon

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Country/Region	china
Categories	Inverters & Converters

Product Range

IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors
MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package

App Characteristics

Basic Data

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	180 A
Rds On - Drain-Source Resistance:	1.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	210 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	27 ns
Forward Transconductance - Min:	132 S
Product Type:	MOSFET
Rise Time:	23 ns
Series:	OptiMOS 5
Factory Pack Quantity	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	33 ns
Part # Aliases:	IPB017N10N5LF SP001503850
Unit Weight:	0.056438 oz

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Application

Order Process

Add Parts to RFQ form	Submit RFQ	We reply within 24 hours
You confirm order	Payment	Ship out your order

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