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Semiconductors Power Mosfet Transistor N Channel STB24N60DM2

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Product Range

STB24N60DM2 Semiconductors Power Mosfet Transistors Field Effect Transistor Discrete N-Channel
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages

App Characteristics

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Basic Data

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	200 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	FDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	15 ns
Product Type:	MOSFET
Rise Time:	8.7 ns
Series:	STB24N60DM2
	1000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	0.139332 oz

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Application

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