NCS4333DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS4333DR2G Power MOSFET:

NCS4333DR2G

The NCS4333DR2G delivers industry-leading current density in ON Semiconductor's space-saving DFN PowerSSO-8 package. As a 33A N-channel MOSFET optimized for high-power density applications with stringent footprint constraints, it maximizes current handling within minimal dimensions.

Key Features:

• 60V power rating
• 33A continuous drain current capability
• 18mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO-8 package
• Very low 4°C/W junction-to-case thermal resistance
• -55°C to 150°C operating temperature range
• Low internal gate charge for high frequency switching
• Ideal for compact motor drives, solar microinverters and industrial automation

PowerSSO-8's copper vias provide superb heat dissipation from ultra-compact footprint.

Enables exceptionally high current density optimization within board area limitations.

Ensures reliable operation even under harsh wide-temperature conditions.

Low gate charge maximizes switching frequencies in tightly integrated power designs.

Simply the highest current density solution available for applications with board space constraints.

On Semiconductor’s power density leader optimized where dimensional space is limited.

An ideal fit for tightly packed systems requiring maximum current capability in minimal footprint.